According to a report from the "Shanghang Media" WeChat public account, the overall structure of Fujian Jingxu Semiconductor Technology Co., Ltd.'s Phase II project—a high-frequency filter chip production facility based on gallium oxide (Ga₂O₃) piezoelectric thin-film new materials—has begun to take shape recently.

A company representative stated that the civil engineering and main structural work, including the roof sealing, have been completed. The project has now moved on to the construction of drainage pipelines and road surfacing. Interior decoration has entered the fine-finishing stage, while the power station equipment room and the cleanroom for Jingxu's production facility are also under construction. Trial production is expected to begin as early as September.

The project, with a total investment of 1.68 billion yuan (approx. $260 million), covers an industrial area of 136 mu (about 9 hectares). It will establish the world's first ultra-wide bandgap semiconductor high-frequency filter chip production line, with the initial phase achieving an annual capacity of 400 million units (400KK) and an estimated annual output value of around 1 billion yuan ($155 million). Once operational, it will not only fill a domestic gap in gallium oxide piezoelectric thin-film materials but also significantly boost the development of Shanghang County's new materials industry.

Fujian Jingxu Semiconductor Technology Co., Ltd. is a high-tech enterprise with independent intellectual property rights, specializing in mid-to-high frequency acoustic wave filter wafers and chip materials for 5G communications. The company's technical team has been researching 5G acoustic wave filter fabrication since 2005 and holds over 100 patents in optoelectronic integrated chips and compound single-crystal thin-film materials. It is internationally leading in the preparation technology of piezoelectric thin-film materials for RF filters, a core component of 5G devices.